Research Progress of p-Type Oxide Thin-Film Transistors

Zhuping Ouyang; Wanxia Wang; Mingjiang Dai; Baicheng Zhang; Jianhong Gong; Mingchen Li; Lihao Qin; Hui Sun

doi:10.3390/ma15144781

Research Progress of p-Type Oxide Thin-Film Transistors

Materials (Basel). 2022 Jul 8;15(14):4781. doi: 10.3390/ma15144781.

Authors

Zhuping Ouyang¹, Wanxia Wang², Mingjiang Dai³, Baicheng Zhang⁴, Jianhong Gong², Mingchen Li¹, Lihao Qin¹, Hui Sun¹

Affiliations

¹ School of Space Science and Physics, Shandong University, Weihai 264209, China.
² School of Mechanical, Electrical and Information Engineering, Shandong University, Weihai 264200, China.
³ Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510651, China.
⁴ Beijing Advanced Innovation Center Materials Genome Engineering, Advanced Material & Technology Institute, University of Science and Technology Beijing, Beijing 100083, China.

Abstract

The development of transparent electronics has advanced metal-oxide-semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.

Keywords: cuprous oxide; nickel oxide; orbital hybrid; oxide Thin-Film transistors; preparation technology; tin oxide.

Publication types

Review

Grants and funding

We gratefully acknowledge the Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology (2020B1212060049) and Young Scholars Program of Shandong University, Weihai for their financial support. We also thank Physical-Chemical Materials Analytical & Testing Center of Shandong University at Weihai for their assistance with characterization.