Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals Heterostructures

Ciao-Fen Chen; Shih-Hsien Yang; Che-Yi Lin; Mu-Pai Lee; Meng-Yu Tsai; Feng-Shou Yang; Yuan-Ming Chang; Mengjiao Li; Ko-Chun Lee; Keiji Ueno; Yumeng Shi; Chen-Hsin Lien; Wen-Wei Wu; Po-Wen Chiu; Wenwu Li; Shun-Tsung Lo; Yen-Fu Lin

doi:10.1002/advs.202106016

Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals Heterostructures

Adv Sci (Weinh). 2022 Aug;9(24):e2106016. doi: 10.1002/advs.202106016. Epub 2022 Jul 13.

Authors

Ciao-Fen Chen^{1

2}, Shih-Hsien Yang^{2

3}, Che-Yi Lin², Mu-Pai Lee^{2

4}, Meng-Yu Tsai^{2

5}, Feng-Shou Yang^{2

5}, Yuan-Ming Chang², Mengjiao Li², Ko-Chun Lee⁵, Keiji Ueno⁶, Yumeng Shi³, Chen-Hsin Lien⁵, Wen-Wei Wu^{4

7}, Po-Wen Chiu⁵, Wenwu Li⁸, Shun-Tsung Lo¹, Yen-Fu Lin^{2

9}

Affiliations

¹ Department of Electrophysics and Center for Emergent Functional Matter Science (CEFMS), National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
² Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
³ International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (Ministry of Education), Engineering Technology Research Center for 2D Material Information Functional Devices and Systems (Guangdong Province), Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.
⁴ Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan.
⁵ Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
⁶ Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan.
⁷ Center for the Intelligent Semiconductor Nano-system Technology Research, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan.
⁸ Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Zhangjiang Fudan International Innovation Center, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China.
⁹ Department of Materials Science and Engineering, Institute of Nanoscience, i-Center for Advanced Science and Technology (i-CAST), National Chung Hsing University, Taichung, 40227, Taiwan.

Abstract

Van der Waals (vdW) heterostructures-in which layered materials are purposely selected to assemble with each other-allow unusual properties and different phenomena to be combined and multifunctional electronics to be created, opening a new chapter for the spread of internet-of-things applications. Here, an O₂ -ultrasensitive MoTe₂ material and an O₂ -insensitive SnS₂ material are integrated to form a vdW heterostructure, allowing the realization of charge-polarity control for multioperation-mode transistors through a simple and effective rapid thermal annealing strategy under dry-air and vacuum conditions. The charge-polarity control (i.e., doping and de-doping processes), which arises owing to the interaction between O₂ adsorption/desorption and tellurium defects at the MoTe₂ surface, means that the MoTe₂ /SnS₂ heterostructure transistors can reversibly change between unipolar, ambipolar, and anti-ambipolar transfer characteristics. Based on the dynamic control of the charge-polarity properties, an inverter, output polarity controllable amplifier, p-n diode, and ternary-state logics (NMIN and NMAX gates) are demonstrated, which inspire the development of reversibly multifunctional devices and indicates the potential of 2D materials.

Keywords: MoTe2; SnS2; charge-polarity control; multioperation-mode transistors; van der Waals heterostructures.

Abstract

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