Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device

Tsz-Lung Ho; Keda Ding; Nikolay Lyapunov; Chun-Hung Suen; Lok-Wing Wong; Jiong Zhao; Ming Yang; Xiaoyuan Zhou; Ji-Yan Dai

doi:10.3390/nano12132128

Multi-Level Resistive Switching in SnSe/SrTiO₃ Heterostructure Based Memristor Device

Nanomaterials (Basel). 2022 Jun 21;12(13):2128. doi: 10.3390/nano12132128.

Authors

Tsz-Lung Ho¹, Keda Ding¹, Nikolay Lyapunov¹, Chun-Hung Suen¹, Lok-Wing Wong¹, Jiong Zhao¹, Ming Yang¹, Xiaoyuan Zhou², Ji-Yan Dai¹

Affiliations

¹ Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
² College of Physics, Chongqing University, Chongqing 401331, China.

Abstract

Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO₃(STO) heterojunction-based memory devices with silver (Ag) and copper (Cu) top electrodes. The SnSe/STO-based memory devices present bipolar resistive switching (RS) with two orders of magnitude on/off ratio, which is reliable and stable. Moreover, multilevel state switching is achieved in the devices by sweeping voltage with current compliance to SET the device from high resistance state (HRS) to low resistance state (LRS) and RESET from LRS to HRS by voltage pulses without compliance current. With Ag and Cu top electrodes, respectively, eight and six levels of resistance switching were demonstrated in the SnSe/SrTiO₃ heterostructures with a Pt bottom electrode. These results suggest that a SnSe/STO heterojunction-based memristor is promising for applications in neuromorphic computing as a synaptic device.

Keywords: RRAM; SnSe; SrTiO3; memristor; perovskite.

Grants and funding

We acknowledge the support from Hong Kong GRF grant (No. 15301421), the Guangdong–Hong Kong–Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices (GDSTC No. 2019B121205001), and the Hong Kong Polytechnic University (Grant Nos. 1-ZVSQ, UAEZ). X. Zhou acknowledges financial support from the National Natural Science Foundation of China (NSFC) (grant nos. 11674040, 11904039) and the Fundamental Research Funds for the Central Universities (grant nos. 2018CDQYWL0048, 106112017CDJQJ308821, and 2018CDPTCG0001/26). N.L. also acknowledges the financial support from the Hong Kong fellowship scheme.