Synergistic effect of indium doping and chlorine surface passivation on CsPbI3 perovskite quantum dots for deep-red light-emitting devices

Xin Zhou; Xuan Tong; Xiaolong Li; Yonggang Min; Yannan Qian

doi:10.1364/OL.458017

Synergistic effect of indium doping and chlorine surface passivation on CsPbI₃ perovskite quantum dots for deep-red light-emitting devices

Opt Lett. 2022 Jun 15;47(12):3047-3050. doi: 10.1364/OL.458017.

Authors

Xin Zhou, Xuan Tong, Xiaolong Li, Yonggang Min, Yannan Qian

PMID: 35709046
DOI: 10.1364/OL.458017

Abstract

Deep-red CsPbI₃ perovskite quantum dots (PeQDs) are essential for high-efficiency perovskite light-emitting diodes (PeLEDs) because of their high color purity and high photoluminescence quantum yield (PLQY). The synergetic strategy of indium (In) doping and chlorine (Cl) surface passivation not only partially replaced Pb²⁺ ions with the smaller ionic In³⁺ but also filled I^- vacancies by Cl^- on the surface, maintaining the humidity stability for more than 24 days and yielding excellent PLQY. Benefiting from this synergetic strategy, deep-red (approximately at 683 nm) CsPbI₃ PeLEDs showed a maximum luminance and external quantum efficiency (EQE) of 311 cd m^-2 and 8.32%, respectively.