High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO3 films

Yanling Song; Qiyuan Wu; Caihong Jia; Zhaomeng Gao; Weifeng Zhang

doi:10.1039/d2ra01156e

High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO₃ films

RSC Adv. 2022 May 25;12(25):15814-15821. doi: 10.1039/d2ra01156e. eCollection 2022 May 23.

Authors

Yanling Song¹, Qiyuan Wu¹, Caihong Jia¹, Zhaomeng Gao², Weifeng Zhang¹

Affiliations

¹ Henan Key Laboratory of Photovoltaic Materials, Center for Topological Functional Materials, Henan University Kaifeng 475004 People's Republic of China wfzhang@henu.edu.cn.
² Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China.

Abstract

BiFeO₃ (BFO), Bi_0.92Gd_0.08FeO₃ (BGFO) and Bi_0.92Gd_0.08Fe_0.95Ni_0.05O₃ (BGFNO) films are epitaxially grown on 0.7 wt% Nb-SrTiO₃ (NSTO) substrates. The strong ferroelectric property in BGFNO film is confirmed by piezoresponse force microscopy (PFM) and polarization versus voltage (P-V) measurement. It is also found that the Au/BGFNO/NSTO devices possess a ferroelectric resistance switching (RS) effect. Gd- and Ni-codoped BiFeO₃ is found to strongly enhance the resistance on/off ratio. A resistance on/off ratio as large as 3 × 10⁶ is achieved with an applied pulse voltage of -8 V and +4 V. In addition, the devices exhibit excellent retention and anti-fatigue characteristics. The memristor behavior of Au/BGFNO/NSTO is attributed to the switching of polarization states, which modulate the width and height of the barrier at the BGFNO/NSTO interface. The excellent resistive switching properties in Au/BGFNO/NSTO devices indicate the promising application in nonvolatile memory.