BiCuSeO oxyselenide, one of the best oxygen-containing thermoelectric materials, is promising with great potential applications. In this work, we present a high ZT of >1.3 in Bi0.90Pb0.10Cu0.96Fe0.04SeO fabricated via microwave synthesis and subsequent spark plasma sintering (SPS). We added 3-4 atom % Fe to the Pb-doped BiCuSeO to regulate the hole carrier concentration and mobility to 0.8-1.0 × 1020 cm-3 and ∼40 cm2 V-1 S-1, respectively, achieving moderate electrical conductivity, high Seebeck coefficient, and low carrier thermal conductivity simultaneously in a dual-doped sample. Under the synergistic enhancement by stress field, dislocation, and nanophase, the lattice thermal conductivity of Bi0.90Pb0.10Cu0.96Fe0.04SeO is limited to 0.24-0.49 W m-1 K-1 at 300-873 K. The development of efficient preparation methods for high-performance thermoelectric materials is significant to promote the application of thermoelectric conversion technology.
Keywords: BiCuSeO oxyselenide; carrier transport; figure of merit (ZT); microwave synthesis; phonon transport.