High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate

Shuo Zhang; Meng Liang; Yan Yan; Jinpeng Huang; Yan Li; Tao Feng; Xueliang Zhu; Zhicong Li; Chenke Xu; Junxi Wang; Jinmin Li; Zhiqiang Liu; Xiaoyan Yi

doi:10.3390/nano12101638

High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate

Nanomaterials (Basel). 2022 May 11;12(10):1638. doi: 10.3390/nano12101638.

Authors

Shuo Zhang^{1

2

3}, Meng Liang^{1

2

3}, Yan Yan^{1

2

3}, Jinpeng Huang¹, Yan Li^{1

2

3}, Tao Feng^{1

2

3}, Xueliang Zhu⁴, Zhicong Li^{1

2

5}, Chenke Xu⁴, Junxi Wang^{1

2

3}, Jinmin Li^{1

2

3}, Zhiqiang Liu^{1

2

3}, Xiaoyan Yi^{1

2

3}

Affiliations

¹ Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
³ Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China.
⁴ Xiamen San'an Optoelectronic Technology Co., Ltd., Xiamen 361009, China.
⁵ Yangzhou Zhongke Semiconductor Lighting Company, Yangzhou 225101, China.

Abstract

Constant advance in improving the luminous efficacy (η_L) of nitride-based light-emitting diodes (LEDs) plays a critical role for saving measurable amounts of energy. Further development is motivated to approach the efficiency limit for this material system while reducing the costs. In this work, strategies of using thin AlN prebuffer and transitional-refraction-index patterned sapphire substrate (TPSS) were proposed, which pushed up the efficiency of white LEDs (WLEDs). The AlN prebuffer was obtained through physical vapor deposition (PVD) method and TPSS was fabricated by dry-etched periodic silica arrays covered on sapphire. Devices in mass production confirmed that PVD AlN prebuffer was able to improve the light output power (φ_e) of blue LEDs (BLEDs) by 2.53% while increasing the productivity by ~8% through shortening the growth time. Additionally, BLEDs on TPSS exhibited an enhanced top η_ext of 5.65% in contrast to BLEDs on the conventional PSS through Monte Carlo ray-tracing simulation. Consequently, φ_e of BLEDs was experimentally enhanced by 10% at an injected current density (J_in) of 40 A/cm². A peak η_L of 295.2 lm/W at a J_in of 0.9 A/cm² and the representative η_L of 282.4 lm/W at a J_in of 5.6 A/cm² for phosphor-converted WLEDs were achieved at a correlated color temperature of 4592 K.

Keywords: AlN prebuffer; light output power; light-emitting diodes; luminous efficacy; transitional-refraction-index patterned sapphire substrate.

Abstract

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