The Role of the Graphene Oxide (GO) and Reduced Graphene Oxide (RGO) Intermediate Layer in CZTSSe Thin-Film Solar Cells

Woo-Lim Jeong; Sang-Hyuk Park; Young-Dahl Jho; Soo-Kyung Joo; Dong-Seon Lee

doi:10.3390/ma15103419

The Role of the Graphene Oxide (GO) and Reduced Graphene Oxide (RGO) Intermediate Layer in CZTSSe Thin-Film Solar Cells

Materials (Basel). 2022 May 10;15(10):3419. doi: 10.3390/ma15103419.

Authors

Woo-Lim Jeong¹, Sang-Hyuk Park¹, Young-Dahl Jho¹, Soo-Kyung Joo¹, Dong-Seon Lee¹

Affiliation

¹ School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Gwangju 61005, Korea.

Abstract

Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cells with low cost and eco-friendly characteristics are attractive as future sources of electricity generation, but low conversion efficiency remains an issue. To improve conversion efficiency, a method of inserting intermediate layers between the CZTSSe absorber film and the Mo back contact is used to suppress the formation of MoSe₂ and decomposition of CZTSSe. Among the candidates for the intermediate layer, graphene oxide (GO) and reduced GO have excellent properties, including high-charge mobility and low processing cost. Depending on the type of GO, the solar cell parameters, such as fill factor (FF), were enhanced. Thus, the conversion efficiency of 6.3% was achieved using the chemically reduced GO intermediate layer with significantly improved FF.

Keywords: Cu2ZnSn(S,Se)4; back contact; graphene oxide; intermediate layer; thin-film solar cells.

Grants and funding

2022/GIST Young Scientist Research Project grant