High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

Zhinan Guo; Rui Cao; Huide Wang; Xi Zhang; Fanxu Meng; Xue Chen; Siyan Gao; David K Sang; Thi Huong Nguyen; Anh Tuan Duong; Jinlai Zhao; Yu-Jia Zeng; Sunglae Cho; Bing Zhao; Ping-Heng Tan; Han Zhang; Dianyuan Fan

doi:10.1093/nsr/nwab098

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

Natl Sci Rev. 2021 May 31;9(5):nwab098. doi: 10.1093/nsr/nwab098. eCollection 2022 May.

Authors

Zhinan Guo¹, Rui Cao¹, Huide Wang¹, Xi Zhang², Fanxu Meng¹, Xue Chen³, Siyan Gao², David K Sang¹, Thi Huong Nguyen⁴, Anh Tuan Duong⁴, Jinlai Zhao¹, Yu-Jia Zeng¹, Sunglae Cho⁴, Bing Zhao⁵, Ping-Heng Tan³, Han Zhang¹, Dianyuan Fan¹

Affiliations

¹ Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
² Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Shenzhen University, Shenzhen 518060, China.
³ State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
⁴ Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, South Korea.
⁵ State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun 130012, China.

Abstract

Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) belongs to a non-symmetry point group of [Formula: see text], which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β-InSe have been experimentally and theoretically proven, showing that the β-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.

Keywords: 2D materials; Raman spectra; photodetectors; polarization; β-InSe.