Ring-opening metathesis polymerization (ROMP) using Grubbs third-generation catalyst directly yielded a norbornene-based polymer bearing robust redox-active radicals without any protection. Successive addition of imidazolium-containing norbornene in a one-pot reaction during ROMP produced pendant radical- and ion-containing block copolymers. The diode-structured thin-film devices fabricated with the obtained block polymers that had morphologies of spheres, lamellae, and inverse spheres exhibited conductive switching (write-once read-many-times, WORM) under a bias voltage, which revealed the dominant effect of the location of radicals and ions in the microphase-segregated domains on memory characteristics.