Molybdenum disulfide (MoS2) is a promising candidate for the development of high-performance photodetectors, due to its excellent electric and optoelectronic properties. However, most of the reported MoS2 phototransistors have adopted a back-gate field-effect transistor (FET) structure, requiring applied gate bias voltages as high as 70 V, which made it impossible to modulate each detecting device in the fabricated array. In this paper, buried-gate FETs based on CVD-grown monolayer MoS2 were fabricated and their electric and photoelectric properties were also systematically investigated. A photoresponsivity of around 6.86 A/W was obtained at 395 nm, under the conditions of zero gate bias voltage and a light power intensity of 2.57 mW/cm2. By application of a buried-gate voltage of 8 V, the photoresponsivity increased by nearly 10 times. Furthermore, the response speed of the buried-gate MoS2 FET phototransistors is measured to be around 350 ms. These results pave the way for MoS2 photodetectors in practical applications.
© 2022 The Authors. Published by American Chemical Society.