Through-silicon via submount for the CuO/Cu2O nanostructured field emission display

Chun-Liang Lu; Shoou-Jinn Chang; Ting-Jen Hsueh

doi:10.1039/c7ra12368j

Through-silicon via submount for the CuO/Cu₂O nanostructured field emission display

RSC Adv. 2018 Jan 2;8(2):706-709. doi: 10.1039/c7ra12368j.

Authors

Chun-Liang Lu¹, Shoou-Jinn Chang¹, Ting-Jen Hsueh²

Affiliations

¹ Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University Tainan 701 Taiwan.
² National Nano Devices Laboratories Tainan 741 Taiwan tj.Hsueh@gmail.com.

Abstract

A three dimensional (3D) field emission display structure was prepared using CuO/Cu₂O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. For the 3D field emission structure, high-density CuO/Cu₂O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu₂O composite NWs were 15 V μm^-1 and ∼1748, respectively. With regard to field emission displays, we successfully used the 3D field emission structure to excite the orange phosphors.