Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

Kuan-Yin Chen; Sheng-Po Chang; Chih-Hung Lin

doi:10.1039/c8ra08803a

Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

RSC Adv. 2018 Dec 20;9(1):87-90. doi: 10.1039/c8ra08803a. eCollection 2018 Dec 19.

Authors

Kuan-Yin Chen¹, Sheng-Po Chang¹, Chih-Hung Lin²

Affiliations

¹ Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University Tainan 70101 Taiwan changsp@mail.ncku.edu.tw.
² National Nano Device Laboratories Tainan 741 Taiwan.

Abstract

An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10⁴, with a photoresponsivity of 1.9 × 10^-2 A W^-1, as well as a rejection ratio of 2.68 × 10⁴ at a voltage bias of 10 V.