Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film

Wenjie Wang; Jing Chen; Jiajun Deng; Jiantao Che; Bing Hu; Xin Cheng

doi:10.1039/c8ra10256b

Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film

RSC Adv. 2019 Apr 8;9(19):10776-10780. doi: 10.1039/c8ra10256b. eCollection 2019 Apr 3.

Authors

Wenjie Wang¹, Jing Chen¹, Jiajun Deng¹, Jiantao Che¹, Bing Hu¹, Xin Cheng¹

Affiliation

¹ Mathematics and Physics Department, North China Electric Power University Beijing 102206 China wwj2008@ncepu.edu.cn.

Abstract

The effect of Sb content on the in-plane anisotropic magnetoresistance (AMR) of the quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) was investigated. The results showed that the strain increased with Sb content, but the hole density was found to fluctuate. Dominant cubic and uniaxial symmetries were observed for the current along the [110] crystalline direction. The dependence of the symmetry on the Sb content was demonstrated for the longitudinal AMR, which mainly results from the alteration of the local stain relaxation and the hole density. A phenomenological analysis showed that the variation of the AMR coefficients is a good explanation for the observed experimental results.