Digital micro-photogrammetry in analysis and modeling habit and sectoral structure of real high-pressure high-temperature single-crystal diamonds

Petro M Lytvyn; Viktor V Strelchuk; Andrii S Nikolenko; Ihor M Danylenko; Serii O Ivakhnenko; Tetiana V Kovalenko; Oleksandr G Gontar; Serhii V Malyuta

doi:10.1063/5.0078022

Digital micro-photogrammetry in analysis and modeling habit and sectoral structure of real high-pressure high-temperature single-crystal diamonds

Rev Sci Instrum. 2022 Mar 1;93(3):033903. doi: 10.1063/5.0078022.

Authors

Petro M Lytvyn¹, Viktor V Strelchuk¹, Andrii S Nikolenko¹, Ihor M Danylenko¹, Serii O Ivakhnenko², Tetiana V Kovalenko², Oleksandr G Gontar², Serhii V Malyuta³

Affiliations

¹ V. E. Lashkaryov Institute of Semiconductor Physics NASU, Pr. Nauky 41, 03028 Kyiv, Ukraine.
² V. Bakul Institute for Superhard Materials NASU, Avtozavodska Str. 2, 04074 Kyiv, Ukraine.
³ National Technical University of Ukraine "Igor Sikorsky Kyiv Polytechnic Institute", Peremohy Avenue 37, 03056 Kyiv, Ukraine.

PMID: 35365002
DOI: 10.1063/5.0078022

Abstract

We demonstrate the potential of using digital stereo micro-photogrammetry for the analysis and modeling of the habit and sectoral structure of real high-pressure high-temperature single-crystal diamonds. A prototype scanning system with a resolution of 5 μm has been implemented based on a digital single-lens reflex camera, making it possible to create highly accurate reproductions of crystal shapes with a minimum size of 4 mm. This method makes it possible to monitor the effect of actual conditions on the physical processes of crystal growth, which is a useful advance for the development of active device elements based on semiconductor diamonds.