Stacking-Dependent Electrical Transport in a Colloidal CdSe Nanoplatelet Thin-Film Transistor

Nano Lett. 2022 Apr 13;22(7):2780-2785. doi: 10.1021/acs.nanolett.1c04822. Epub 2022 Mar 28.

Abstract

Here, we report an exceptional feature of the one-dimensional threadlike assemblies of a four-monolayer colloidal CdSe nanoplatelet (NPL)-based thin-film transistor. A series of different lengths of threads (200-1200 nm) was used as an active n channel in thin-film transistors (TFTs) to understand the change in mobility with the length of the threads. The film with the longest threads shows the highest conductivity of ∼12 S/cm and electron mobility of ∼14.3 cm2 V-1 s-1 for an applied gate voltage of 2 V. The mobility trends with the length seem to be driven mostly by the lower defects in threads, where the loss of electron hopping is less. Furthermore, our results show the mobility trends in stacking-dependent CdSe NPL threads and provide a new insight into fabricating high-mobility TFTs with the use of colloidal CdSe NPLs.

Keywords: CdSe nanoplatelets; Charge transport; Self-assembly; Thin-film transistor; mobility.