Non-electrical contact and non-carrier injection (NEC&NCI) mode is an emerging driving mode for nanoscale light-emitting diodes (LEDs), aiming for applications in nano-pixel light-emitting displays (NLEDs). However, the working mechanism of nano-LED operating in NEC&NCI mode is not clear yet. In particular, the questions comes down to how the inherent holes and electrons in the LED can support sufficient radiation recombination, which lacks a direct physical picture. In this work, a finite element simulation was used to study the working process of the nano-LED operating in the NEC&NCI mode to explore the working mechanisms. The energy band variation, carrier concentration redistribution, emission rate, emission spectrum, and current-voltage characteristics are studied. Moreover, the effect of the thickness of insulating layer that plays a key role on device performance is demonstrated. We believe this work can provide simulation guidance for a follow-up study of NEC&NCI-LED.
Keywords: alternating current; nano-LED; non-carrier injection; simulation; working mechanism.