Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

A A Shashkin; M Yu Melnikov; V T Dolgopolov; M M Radonjić; V Dobrosavljević; S-H Huang; C W Liu; Amy Y X Zhu; S V Kravchenko

doi:10.1038/s41598-022-09034-x

Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

Sci Rep. 2022 Mar 24;12(1):5080. doi: 10.1038/s41598-022-09034-x.

Authors

A A Shashkin¹, M Yu Melnikov¹, V T Dolgopolov¹, M M Radonjić², V Dobrosavljević³, S-H Huang⁴, C W Liu⁴, Amy Y X Zhu⁵, S V Kravchenko⁶

Affiliations

¹ Institute of Solid State Physics, Chernogolovka, Moscow District, 142432, Russia.
² Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080, Belgrade, Serbia.
³ Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32306, USA.
⁴ Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 106, Taiwan.
⁵ Department of Physics, Northeastern University, Boston, MA, 02115, USA.
⁶ Department of Physics, Northeastern University, Boston, MA, 02115, USA. s.kravchenko@northeastern.edu.

Abstract

The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature [Formula: see text], at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value [Formula: see text] decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of [Formula: see text] cannot be described by existing theories. The results indicate the spin-related origin of the effect.