Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Dmitry Dzhigaev; Johannes Svensson; Abinaya Krishnaraja; Zhongyunshen Zhu; Zhe Ren; Yi Liu; Sebastian Kalbfleisch; Alexander Björling; Filip Lenrick; Zoltan Imre Balogh; Susanna Hammarberg; Jesper Wallentin; Rainer Timm; Lars-Erik Wernersson; Anders Mikkelsen

doi:10.1039/d2nr90060b

Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Nanoscale. 2022 Mar 31;14(13):5247. doi: 10.1039/d2nr90060b.

Authors

Affiliations

¹ Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. dmitry.dzhigaev@sljus.lu.se.
² Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden.
³ MAX IV Laboratory, Lund University, 22100 Lund, Sweden.
⁴ DTU CEN, DTU, Fysikvej 2800, Lyngby, Denmark.

PMID: 35319063
DOI: 10.1039/d2nr90060b

Abstract

Correction for 'Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction' by Dmitry Dzhigaev et al., Nanoscale, 2020, 12, 14487-14493, DOI: 10.1039/D0NR02260H.

Publication types

Published Erratum