Among the solution-processed devices, perovskite solar cells (PSCs) exhibit the highest power conversion efficiency (PCE) of over 25%; tremendous efforts are being undertaken to improve their stability. Recently, all-inorganic CsPbI2Br-based PSCs were reported to exhibit a significantly improved device stability, with a promising PCE of up to 16.79%. In this study, we report stable all-inorganic PSCs by incorporating novel dopant-free hole-transporting materials (HTMs). The synthesis strategy of the newly synthesized polymeric HTMs was similar to that of 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), with the exception that they were designed to exhibit dopant-free characteristics. In particular, their polymeric backbone structure was significantly simpler than that of spiro-OMeTADs, and they were easily synthesized in two steps from commercially available chemicals, with an overall yield of ∼50%. The cost of synthesis at the laboratory scale was calculated to be at least 2.4 times cheaper than that of spiro-OMeTADs. The PCE of dopant-free HTM-based PSCs was 11.01%, which is 1.5 times higher than that of the dopant-free spiro-OMeTAD-based devices (7.52%) and comparable to that of the doped spiro-OMeTAD-based devices (12.22%). Notably, the stability of the device based on our dopant-free HTM to atmospheric oxygen and moisture as well as heat and light irradiation was superior to that of devices based on doped and dopant-free spiro-OMeTAD HTMs. On consideration of the synthesis cost, device efficiency, and device stability, our dopant-free HTM is highly promising for all-inorganic PSCs.
Keywords: CsPbI2Br; dopant-free hole-transporting materials; long-term stability; low cost; perovskite solar cells.