Two sandwiched ZnO/Metal/ZnO transparent conductive thin films, 50nm ZnO/Cu/50nm ZnO (abbreviated as ZnO(Cu)) and 50nm ZnO/Ti/Cu/Ti/50nm ZnO (abbreviated as ZnO(Ti/Cu)) were deposited by magnetron sputtering technology. The comparative analysis of experiment results shows that the introduction of the Ti layer is beneficial to the overall properties of ZnO(Ti/Cu) thin film compared to ZnO(Cu) thin film with the same metal layer thickness. The effect of the annealing temperature on the performance of the two film systems was studied. Although the carrier concentration did not always increase with annealing temperature, the sheet resistances did decrease due to the obvious increase of mobility. The transmittance of ZnO(Cu) thin films increases with annealing temperature, while that of ZnO(Ti/Cu) films increases at first and then decreases. The optical band gap of ZnO(Cu) thin films increases with temperature, but is lower than that of ZnO(Ti/Cu) thin films, whose bandgap first increases with temperature and then decreases. The figure of merit of the ZnO(Ti/Cu) film is better than that of ZnO(Cu), which shows that the overall performance of ZnO(Ti/Cu) films is better, and annealing can improve the performance of the film systems.
Keywords: ZnO/Metal/ZnO; annealing temperature; optical properties; sheet resistance; transparent conductive thin film.