Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique

Man Li; Yufeng Guo; Jiafei Yao; Jun Zhang; Fanyu Liu; Weihua Tang

doi:10.3390/mi13020262

Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique

Micromachines (Basel). 2022 Feb 6;13(2):262. doi: 10.3390/mi13020262.

Authors

Man Li^{1

2}, Yufeng Guo^{1

2}, Jiafei Yao^{1

2}, Jun Zhang^{1

2}, Fanyu Liu³, Weihua Tang^{1

2}

Affiliations

¹ College of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
² National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
³ Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

Abstract

An extraction method of the interface-trap densities (D_it) of the stacked bonding structure in 3D integration using high-frequency capacitance-voltage technique is proposed. First, an accurate high-frequency capacitance-voltage model is derived. Next, by numerically solving the charge-balance equation and charge conservation equation, D_it is extracted by fitting the measured and calculated capacitance-voltage curves based on the derived model. Subsequently, the accuracy of the derived model is verified by the agreements between the analytical results and TCAD simulation results. The average extraction error proves the precision and efficiency of the extraction method. Finally, the stacked bonding structure has been fabricated, and D_it at the interface between silicon and insulator is extracted to diagnose and calibrate the fabrication processes.

Keywords: high-frequency capacitance–voltage; interface-trap density; stacked bonding structure.

Abstract

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