In this article, we present the design, fabrication, and characterization of a thermopile infrared sensor array (TISA) pixel. This TISA pixel is composed of a dual-layer p+/n- poly-Si thermopile with a closed membrane and an n-channel metal oxide semiconductor (NMOS) switch. To address the challenges in fabrication through the 3D integration method, the anode of the thermopile is connected to the drain of the NMOS, both of which are fabricated on the same bulk wafer using a CMOS compatible monolithic integration process. During a single process sequence, deposition, etching, lithography, and ion implantation steps are appropriately combined to fabricate the thermopile and the NMOS simultaneously. At the same time as ensuring high thermoelectric characteristics of the dual-layer p+/n- poly-Si thermopile, the basic switching functions of NMOS are achieved. Compared with a separate thermopile, the experimental results show that the thermopile integrated with the NMOS maintains a quick response, high sensitivity and high reliability. In addition, the NMOS employed as a switch can effectively and quickly control the readout of the thermopile sensing signal through the voltage, both on and off, at the gate of NMOS. Thus, such a TISA pixel fabricated by the monolithic CMOS-compatible integration approach is low-cost and high-performance, and can be applied in arrays for high-volume production.
Keywords: NMOS switch; dual-layer p+/n- poly-Si; interleaved MEMS and CMOS processing; monolithic integration; thermopile infrared sensor array (TISA) pixel.