A review on III-V compound semiconductor short wave infrared avalanche photodiodes

Yan Liang; Chandrasekar Perumal Veeramalai; Guochen Lin; Xiangbin Su; Xiaoming Zhang; Shuai Feng; Yingqiang Xu; Chuanbo Li

doi:10.1088/1361-6528/ac5442

A review on III-V compound semiconductor short wave infrared avalanche photodiodes

Nanotechnology. 2022 Mar 9;33(22). doi: 10.1088/1361-6528/ac5442.

Authors

Yan Liang¹, Chandrasekar Perumal Veeramalai^{1

2}, Guochen Lin¹, Xiangbin Su³, Xiaoming Zhang^{1

2}, Shuai Feng^{1

2}, Yingqiang Xu³, Chuanbo Li^{1

2}

Affiliations

¹ School of Science, Minzu University of China, Beijing 100081, People's Republic of China.
² Optoelectronics Research Center, Minzu University of China, Beijing 100081, People's Republic of China.
³ Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.

PMID: 35147516
DOI: 10.1088/1361-6528/ac5442

Abstract

The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated photonics system. Specifically, III-V compound APD has become one of the main applications of optical fiber communication reception due to adaptable bandgap and low noise characteristics. The advancement of structural design and material choice has emerged as a means to improve the performance of APDs. Therefore, it is inevitable to review the evolution and recent developments on III-V compound APDs to understand the current progress in this field. To begin with, the basic working principle of APDs are presented. Next, the structure development of APDs is briefly reviewed, and the subsequent progression of III-V compound APDs (InGaAs APDs, Al_xIn_1-xAs_ySb_1-yAPDs) is introduced. Finally, we also discuss the key issues and prospects of Al_xIn_1-xAs_ySb_1-ydigital alloy avalanche APDs that need to be addressed for the future development of ≥2μm optical communication field.

Keywords: III–V compound semiconductor; avalanche photodiodes; digital alloys; low noise characteristics; short wave infrared.

Publication types

Review