Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

Katarzyna E Hnida-Gut; Marilyne Sousa; Marinus Hopstaken; Steffen Reidt; Kirsten Moselund; Heinz Schmid

doi:10.3389/fchem.2021.810256

Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

Front Chem. 2022 Jan 20:9:810256. doi: 10.3389/fchem.2021.810256. eCollection 2021.

Authors

Katarzyna E Hnida-Gut¹, Marilyne Sousa¹, Marinus Hopstaken², Steffen Reidt¹, Kirsten Moselund¹, Heinz Schmid¹

Affiliations

¹ IBM Research Europe-Zurich, Rüschlikon, Switzerland.
² IBM T.J. Watson Research Center-Yorktown Heights, New York, NY, United States.

Abstract

High-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternative concept of III-V integration combining advantages of pulse electrodeposition, template-assisted selective epitaxy, and recrystallization from a melt. Efficient electrodeposition of nano-crystalline and stochiometric InSb in planar templates on Si (001) is achieved. The InSb deposits are analysed by high resolution scanning transmission electron microscopy (HR-STEM) and energy-dispersive X-ray spectroscopy (EDX) before and after melting and recrystallization. The results show that InSb can crystallise epitaxially on Si with the formation of stacking faults. Furthermore, X-ray photoelectron (XPS) and Auger electron (AE) spectroscopy analysis indicate that the InSb crystal size is limited by the impurity concentration resulting from the electrodeposition process.

Keywords: III-Vs; InSb; TASE; electrodeposition; integration; recrystallization.