All-solid-state pulsed current injection source based on the light initiated multi-gate semiconductor switches

Chongbiao Luan; Hongwei Liu; Xun Ma; Jianqiang Yuan; Lingyun Wang; Hongtao Li; Yupeng Huang; Chuanhui Kang

doi:10.1063/5.0076291

All-solid-state pulsed current injection source based on the light initiated multi-gate semiconductor switches

Rev Sci Instrum. 2022 Jan 1;93(1):014705. doi: 10.1063/5.0076291.

Authors

Chongbiao Luan¹, Hongwei Liu¹, Xun Ma¹, Jianqiang Yuan¹, Lingyun Wang¹, Hongtao Li¹, Yupeng Huang¹, Chuanhui Kang¹

Affiliation

¹ Key Laboratory of Pulsed Power, Institute of Fluid Physics, China Academy of Engineering Physics, P.O. Box 919-108, Mianyang 621900, China.

PMID: 35104965
DOI: 10.1063/5.0076291

Abstract

To study the damage and protection mechanism of the transient electromagnetic pulse to the cables of the electronic equipment under test, an all-solid-state pulsed current injection source with light initiated multi-gate semiconductor switches is developed. The output peak current range of the prepared all-solid-state pulsed current injection source was 0.1-1 kA, the risetime was 18 ns, and the pulse width was 520 ns. In addition, the waveforms of the output peak current were consistent.