Manipulation of current rectification in van der Waals ferroionic CuInP2S6

Xingan Jiang; Xueyun Wang; Xiaolei Wang; Xiangping Zhang; Ruirui Niu; Jianming Deng; Sheng Xu; Yingzhuo Lun; Yanyu Liu; Tianlong Xia; Jianming Lu; Jiawang Hong

doi:10.1038/s41467-022-28235-6

Manipulation of current rectification in van der Waals ferroionic CuInP₂S₆

Nat Commun. 2022 Jan 31;13(1):574. doi: 10.1038/s41467-022-28235-6.

Authors

Xingan Jiang¹, Xueyun Wang², Xiaolei Wang³, Xiangping Zhang¹, Ruirui Niu⁴, Jianming Deng¹, Sheng Xu⁵, Yingzhuo Lun¹, Yanyu Liu^{1

6}, Tianlong Xia⁵, Jianming Lu⁴, Jiawang Hong⁷

Affiliations

¹ School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China.
² School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China. xueyun@bit.edu.cn.
³ College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, 100124, Beijing, China. xiaoleiwang@bjut.edu.cn.
⁴ State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
⁵ Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, 100871, Beijing, China.
⁶ College of Physics and Materials Science, Tianjin Normal University, 300387, Tianjin, PR China.
⁷ School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China. hongjw@bit.edu.cn.

Abstract

Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP₂S₆ as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu⁺ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.

Abstract

Grants and funding