Indium telluride (In2Te3) is a typical layered material among III-IV families that are extremely sensitive to pressure and strain. Here, we use a combination of high-pressure electric transport, Raman, XRD, and first-principles calculations to study the electronic properties and structural evolution characteristics of In2Te3 under high pressure. Our results reveal the evidence of isostructure electronic transitions. First-principle calculations demonstrate that the evolution of phonon modes is associated with the transition from semiconductor to metal due to the increase in the density of states near the Fermi level. The pressure-induced metalization as a precursor monitors the structural phase transition, and then the superconductivity is produced. Further, in decompression, Tc slightly increased and remained at 3.0 GPa, and then the disorder is present and the superconductivity is suppressed. Our work not only perfects the superconducting phase of the In-Te system under pressure but also provides a reference for further superconducting research and applications.