Based on the strategy that electrocatalysts can be used as additives to improve the performance of photocatalysts, and the unique metalloid properties of tungsten nitride (WN), it can form a Schottky junction with the semiconductor at the heterogeneous interface to improve the photocatalytic performance of semiconductor catalysts. In this paper, WN with excellent electrical conductivity was selected as a new noble-metal-free co-catalyst to improve the photoreduction hydrogen (H2) evolution performance of CdS nanoparticles (NPs). Firstly, WN nanosheets were prepared by sol-gel method; then, a novel and noble-metal-free heterojunction photocatalyst, which is CdS NPs deposited on the surface of WN, was successfully fabricated via one-pot solvothermal method. Under visible light irradiation, the H2 production rate of the WN/CdS composite catalyst is 24.13 mmol/g/h, which is 9.28 times that of pure CdS NPs. The observably boosted H2 generation activity could be ascribed to the broadened visible-light absorption and intimate interfacial contact between CdS NPs and WN engenders Schottky junction. This study provides a novel and cost-effective approach for designing efficient noble-metal-free photocatalysts and improving H2 evolution activity of CdS under visible-light-driven photocatalytic water splitting.
Keywords: Noble-metal-free co-catalyst; Photocatalytic H(2) evolution; Schottky junction; Sol-gel method; Tungsten nitride.
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