Confocal fluorescence microscopy provides a means to map charge carrier density within the semiconductor layer in an active organic thin film transistor (OTFT). This method exploits the inverse relationship between charge carrier density and photoluminescence (PL) intensity in OTFTs, originating from exciton quenching following exciton-charge energy transfer. This work demonstrates that confocal microscopy can be a simple yet effective approach to gain insight into doping and de-doping processes in OTFT sensors. Specifically, the mechanisms of hydrogen peroxide sensitivity are studied in low-voltage hygroscopic insulator field effect transistors (HIFETs). While the sensitivity of HIFETs to hydrogen peroxide is well known, the underlying mechanisms remain poorly understood. Using confocal microscopy, new light is shed on these mechanisms. Two distinct doping processes are discerned: one that occurs throughout the semiconductor film, independent of applied voltages; and a stronger doping effect occurring near the source electrode, when acting as an anode with respect to a negatively polarized drain electrode. These insights offer important guidance to future studies and the optimization of HIFET-based sensors. More importantly, the methods reported here are broadly applicable to the study of a range of OTFT-based sensors. This work demonstrates that confocal microscopy can be an effective research tool in this field.
Keywords: OTFT; confocal microscopy; fluorescence; hygroscopic insulator field-effect transistors; sensors.