Spin accumulation and spin Hall effect in a two-layer system with a thin ferromagnetic layer

Mikhail Zhuravlev; Artem Alexandrov; Anatoly Vedyayev

doi:10.1088/1361-648X/ac4c65

Spin accumulation and spin Hall effect in a two-layer system with a thin ferromagnetic layer

J Phys Condens Matter. 2022 Feb 3;34(14). doi: 10.1088/1361-648X/ac4c65.

Authors

Mikhail Zhuravlev^{1

2}, Artem Alexandrov², Anatoly Vedyayev³

Affiliations

¹ St. Petersburg State University, St. Petersburg 190000, Russia.
² Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region 141700, Russia.
³ Lomonosov Moscow State University, Moscow 119991, Russia.

PMID: 35042211
DOI: 10.1088/1361-648X/ac4c65

Abstract

Spin accumulation and spin current are phenomena that enhance the functionality of the devices operating with charge and spin. We calculated them for the system consisting of a ferroelectric barrier and a thin ferromagnetic layer when the current flows parallel to the interface. We assume Dresselhaus and Rashba spin-orbit coupling linear in electron wave number. We demonstrate that spin accumulation and spin current can be manipulated by changing the direction of the magnetization of the FM layer with respect to the crystallographic axes of the ferroelectric barrier.

Keywords: heterostructures; spin Hall effect; spin accumulation; spintronics; spin–orbit coupling.