Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2

Wanying Du; Xionghui Jia; Zhixuan Cheng; Wanjing Xu; Yanping Li; Lun Dai

doi:10.1016/j.isci.2021.103491

Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe₂ and n-MoS₂

iScience. 2021 Nov 22;24(12):103491. doi: 10.1016/j.isci.2021.103491. eCollection 2021 Dec 17.

Authors

Wanying Du^{1

2}, Xionghui Jia^{1

2}, Zhixuan Cheng^{1

2}, Wanjing Xu¹, Yanping Li¹, Lun Dai^{1

2

3}

Affiliations

¹ State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
² Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
³ Peking University Yangtze Delta Institute of Optoelectronics, Beijing 100871, China.

Abstract

Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory. Besides, most of the inverters were made of mechanically exfoliated materials, which hinders their reproducible production and large-scale integration in practical application. In this study, we demonstrate a practical approach to fabricate CMOS inverter arrays using large-area p-MoTe₂ and n-MoS₂, which are grown via chemical vapor deposition method. The current characteristics of the channel materials are balanced by atomic layer depositing Al₂O₃. Complete logic swing and clear dynamic switching behavior are observed in the inverters. Especially, ultra-low power consumption of ∼0.37 nW is achieved. Our work paves the way for the application of 2D TMDCs materials in large-scale low-power-consumption logic circuits.

Keywords: Devices; Engineering; Nanomaterials.