Freestanding Graphene Fabric Film for Flexible Infrared Camouflage

Guang Cui; Zhe Peng; Xiaoyan Chen; Yi Cheng; Lin Lu; Shubo Cao; Sudong Ji; Guoxin Qu; Lu Zhao; Shaokai Wang; Shida Wang; Yizhen Li; Haina Ci; Maoyuan Li; Zhongfan Liu

doi:10.1002/advs.202105004

Freestanding Graphene Fabric Film for Flexible Infrared Camouflage

Adv Sci (Weinh). 2022 Feb;9(5):e2105004. doi: 10.1002/advs.202105004. Epub 2021 Dec 16.

Authors

Guang Cui^{1

2

3}, Zhe Peng⁴, Xiaoyan Chen¹, Yi Cheng^{2

3}, Lin Lu¹, Shubo Cao¹, Sudong Ji¹, Guoxin Qu¹, Lu Zhao¹, Shaokai Wang⁵, Shida Wang¹, Yizhen Li¹, Haina Ci^{3

6

7}, Maoyuan Li¹, Zhongfan Liu^{2

3}

Affiliations

¹ Beijing System Design Institute of Mechanical-Electrical Engineering, Beijing, 100871, P. R. China.
² Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
³ Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China.
⁴ Shandong Academy of Agricultural Sciences, Jinan, 250100, P. R. China.
⁵ Ningbo Innovation Research Institute, Beihang University, Ningbo, 315800, China.
⁶ College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, P. R. China.
⁷ School of Mechanical and Electrical Engineering, Qingdao University of Science and Technology, Qingdao, 266061, P. R. China.

Abstract

Graphene films, fabricated by chemical vapor deposition (CVD) method, have exhibited superiorities in high crystallinity, thickness controllability, and large-scale uniformity. However, most synthesized graphene films are substrate-dependent, and usually fragile for practical application. Herein, a freestanding graphene film is prepared based on the CVD route. By using the etchable fabric substrate, a large-scale papyraceous freestanding graphene fabric film (FS-GFF) is obtained. The electrical conductivity of FS-GFF can be modulated from 50 to 2800 Ω sq^-1 by tailoring the graphene layer thickness. Moreover, the FS-GFF can be further attached to various shaped objects by a simple rewetting manipulation with negligible changes of electric conductivity. Based on the advanced fabric structure, excellent electrical property, and high infrared emissivity, the FS-GFF is thus assembled into a flexible device with tunable infrared emissivity, which can achieve the adaptive camouflage ability in complicated backgrounds. This work provides an infusive insight into the fabrication of large-scale freestanding graphene fabric films, while promoting the exploration on the flexible infrared camouflage textiles.

Keywords: flexible devices; freestanding; graphene fabric film; infrared camouflage; rewetting.

Abstract

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