Localized surface plasmon resonance-enhanced solar-blind Al0.4Ga0.6N MSM photodetectors exhibiting high-temperature robustness

Shuchi Kaushik; Subhajit Karmakar; Prashant Bisht; Che-Hao Liao; Xiaohang Li; Ravendra Kumar Varshney; Bodh Raj Mehta; Rajendra Singh

doi:10.1088/1361-6528/ac4285

Localized surface plasmon resonance-enhanced solar-blind Al_0.4Ga_0.6N MSM photodetectors exhibiting high-temperature robustness

Nanotechnology. 2022 Jan 12;33(14). doi: 10.1088/1361-6528/ac4285.

Authors

Shuchi Kaushik¹, Subhajit Karmakar¹, Prashant Bisht¹, Che-Hao Liao², Xiaohang Li², Ravendra Kumar Varshney¹, Bodh Raj Mehta¹, Rajendra Singh^{1

3}

Affiliations

¹ Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
² Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
³ Nanoscale Research Facility, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.

PMID: 34902849
DOI: 10.1088/1361-6528/ac4285

Abstract

The appealing properties of tunable direct wide bandgap, high-temperature robustness and chemical hardness, make Al_xGa_1-xN a promising candidate for fabricating robust solar-blind photodetectors (PDs). In this work, we have utilized the optical phenomenon of localized surface plasmon resonance (LSPR) in metal nanoparticles (NPs) to significantly enhance the performance of solar-blind Al_0.4Ga_0.6N metal-semiconductor-metal PDs that exhibit high-temperature robustness. We demonstrate that the presence of palladium (Pd) NPs leads to a remarkable enhancement by nearly 600, 300, and 462%, respectively, in the photo-to-dark current ratio (PDCR), responsivity, and specific detectivity of the Al_0.4Ga_0.6N PD at the wavelength of 280 nm. Using the optical power density of only 32μW cm^-2at -10 V, maximum values of ∼3 × 10³, 2.7 AW^-1, and 2.4 × 10¹³Jones are found for the PDCR, responsivity and specific detectivity, respectively. The experimental observations are supported by finite difference time domain simulations, which clearly indicate the presence of LSPR in Pd NPs decorated on the surface of Al_0.4Ga_0.6N. The mechanism behind the enhancement is investigated in detail, and is ascribed to the LSPR induced effects, namely, improved optical absorption, enhanced local electric field and LSPR sensitization effect. Moreover, the PD exhibits a stable operation up to 400 K, thereby exhibiting the high-temperature robustness desirable for commercial applications.

Keywords: AlGaN; high-temperature robustness; localized surface plasmon resonance; responsivity; solar-blind photodetector; specific detectivity.