Orientation control of the oxygen vacancy channel (OVC) is highly desirable for tailoring oxygen diffusion as it serves as a fast transport channel in ion conductors, which is widely exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ion hopping toward preferential vacant sites is a key to clarifying migration pathways. Here we report anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in situ thermal activation in atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to the OVC, determine the crucial role of the tolerance factor for OVC stability, and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable to ionic-oxide electronics.
Keywords: domain switching; epitaxial strain; in situ STEM; oxygen vacancy channel; oxygen-ion migration.