Large valley polarization in a novel two-dimensional semiconductor H-ZrX2(X = Cl, Br, I)

Jiatian Guo; Zhutong Lu; Keyu Wang; Xiuwen Zhao; Guichao Hu; Xiaobo Yuan; Junfeng Ren

doi:10.1088/1361-648X/ac394f

Large valley polarization in a novel two-dimensional semiconductor H-ZrX₂(X = Cl, Br, I)

J Phys Condens Matter. 2021 Nov 30;34(7). doi: 10.1088/1361-648X/ac394f.

Authors

Jiatian Guo¹, Zhutong Lu¹, Keyu Wang¹, Xiuwen Zhao¹, Guichao Hu¹, Xiaobo Yuan¹, Junfeng Ren^{1

2}

Affiliations

¹ School of Physics and Electronics, Shandong Normal University, Jinan 250014, People's Republic of China.
² Shandong Provincial Engineering and Technical Center of Light Manipulations & Institute of Materials and Clean Energy, Shandong Normal University, Jinan 250014, People's Republic of China.

PMID: 34768243
DOI: 10.1088/1361-648X/ac394f

Abstract

Inspired by the new progress in the research field of two-dimensional valleytronics materials, we propose a new class of transition metal halides, i.e. H-ZrX₂(X = Cl, Br, I), and investigated their valleytronics properties under the first-principles calculations. It harbors the spin-valley coupling at K and K' points in the top of valence band, in which the valley spin splitting of ZrI₂can reach up to 115 meV. By carrying out the strain engineering, the valley spin splitting and Berry curvature can be effectively tuned. The long-sought valley polarization reaches up to 108 meV by doping Cr atom, which corresponds to the large Zeeman magnetic field of 778 T. Furthermore, the valley polarization in ZrX₂can be lineally adjusted or flipped by manipulating the magnetization orientation of the doped magnetic atoms. All the results demonstrate the well-founded application prospects of single-layer ZrX₂, which can be considered as great candidate for the development of valleytronics and spintronics.

Keywords: two-dimensional materials; valley polarization; valley spin splitting; valleytronics.