2D Bi2Se3 materials for optoelectronics

Fakun K Wang; Sijie J Yang; Tianyou Y Zhai

doi:10.1016/j.isci.2021.103291

2D Bi₂Se₃ materials for optoelectronics

iScience. 2021 Oct 14;24(11):103291. doi: 10.1016/j.isci.2021.103291. eCollection 2021 Nov 19.

Authors

Fakun K Wang¹, Sijie J Yang¹, Tianyou Y Zhai¹

Affiliation

¹ State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.

Abstract

2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi₂Se₃ comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi₂Se₃ to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi₂Se₃ materials. The structure and inherent properties of Bi₂Se₃ are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi₂Se₃ materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.

Keywords: Materials application; Nanomaterials; Optoelectronics.

Publication types

Review