The ligand electronics of salen manganese nitride complexes directly influence the locus of oxidation and, thus, the reactivity of the resulting oxidized species. This work investigates the influence of tert-butoxy, isopropoxy, and methoxy substituents on the electronics of salen manganese nitride species and includes the first documentation of the para Hammett value for the tert-butoxy substituent (σpara = -0.13 ± 0.03). Each alkoxy-substituted complex undergoes metal-based oxidation to form manganese(VI), and the kinetics of bimolecular homocoupling to form N2 were assessed by cyclic voltammetry. Bis-oxidation of the manganese complexes was investigated at low temperature using cyclic voltammery and UV-vis-near-IR spectroscopy, and in combination with theoretical calculations, plausible electronic structures of the dications are provided.