Liquid metals, such as Ga and eutectic Ga-In, have been extensively studied for various applications, including flexible and wearable devices. For applying liquid metal to electronic devices, interconnection with the various metal electrodes currently in use, and verifying their mechanical reliability are essential. Here, detailed investigations of the formation and growth of intermetallic compounds (IMCs) during the reactions between liquid Ga and solid nickel were conducted. Ga and Ni were reacted at 250, 300, and 350 °C for 10-240 min. The IMC double layer observed after the reactions contained a Ga7Ni3 bottom layer formed during the reactions, and a GaxNi top layer (with 89-95 at.% of Ga) precipitated during cooling. Numerous empty channels exist between the rod-type Ga7Ni3 IMCs. Ga7Ni3 growth occurred only in the vertical direction, without lateral coarsening and merging between the rods. The time exponents were measured at 1.1-1.5, implying that the reaction kinetics were near-interface reaction-controlled. The activation energy for Ga7Ni3 growth was determined as 49.1 kJ/mol. The experimental results of the Ga-Ni reaction study are expected to provide important information for incorporating liquid metals into electronic devices in the future.
Keywords: X-ray diffraction; gallium; interfacial reaction; intermetallics; scanning electron microscopy.