This work presents a comparison of values of the contact resistivity of silicon solar cells obtained using the following methods: the transmission line model method (TLM) and the potential difference method (PD). Investigations were performed with two independent scientific units. The samples were manufactured with silver front electrodes. The co-firing process was performed in an infrared belt furnace in a temperature range of 840 to 960 °C. The electrical properties of a batch of solar cells fabricated in two cycles were investigated. This work focuses on the different metallisation temperatures of co-firing solar cells and measurements were carried out using the methods mentioned. In the TLM and PD methods, the same calculation formulae were used. Moreover, solar cell parameters measured with these methods had the same, similar, or sometimes different but strongly correlated values. Based on an analysis of the selected databases, this article diagnoses the recent and current state of knowledge regarding the employment of the TLM and PD methods and the available hardware base. These methods are of interest to various research centres, groups of specialists dealing with the optimisation of the electrical properties of silicon photovoltaic cells, and designers of measuring instruments.
Keywords: I–V characteristics; contact resistance; potential difference (PD) method; resistivity; silicon solar cells; transmission line model (TLM) method.