Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Hsin-Ying Lee; Day-Shan Liu; Jen-Inn Chyi; Edward Yi Chang; Ching-Ting Lee

doi:10.3390/ma14195474

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Materials (Basel). 2021 Sep 22;14(19):5474. doi: 10.3390/ma14195474.

Authors

Hsin-Ying Lee¹, Day-Shan Liu², Jen-Inn Chyi³, Edward Yi Chang⁴, Ching-Ting Lee^{1

5}

Affiliations

¹ Department of Photonics, National Cheng Kung University, Tainan 70101, Taiwan.
² Institute of Electro-Optical and Material Science, National Formosa University, Yunlin 63201, Taiwan.
³ Department of Electrical Engineering, National Central University, Zhongli 32001, Taiwan.
⁴ Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
⁵ Department of Electrical Engineering, Yuan Ze University, Taoyuan 32003, Taiwan.

Abstract

Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga₂O₃) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al_0.83In_0.17N/GaN/Al_0.18Ga_0.82N/GaN heterostructured-metal-oxide-semiconductors (MOSHEMTs). The double-channel was constructed by the polarized Al_0.18Ga_0.82N/GaN channel 1 and band discontinued lattice-matched Al_0.83In_0.17N/GaN channel 2. Because of the superior gate control capability, the generally induced double-hump transconductance characteristics of double-channel MOSHEMTs were not obtained in the devices. The superior gate control capability was contributed by the side-wall electrical field modulation in the fin-channel. Owing to the high-insulating Ga₂O₃ gate oxide layer and the high-quality interface between the Ga₂O₃ and GaN layers, low noise power density of 8.7 × 10^-14 Hz^-1 and low Hooge's coefficient of 6.25 × 10^-6 of flicker noise were obtained. Furthermore, the devices had a unit gain cutoff frequency of 6.5 GHz and a maximal oscillation frequency of 12.6 GHz.

Keywords: Ga2O3 gate oxide layer; double-channel metal oxide semiconductor high-electron mobility transistors; flicker noise; multiple-mesa-fin-channel array; vapor cooling condensation system.

Abstract

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