This work combines the high-temperature sintering method and atomic layer deposition (ALD) technique, and yields SiO2 /AlOx -sealed γ-CsPbI3 nanocrystals (NCs). The black-phase CsPbI3 NCs, scattered and encapsulated firmly in solid SiO2 sub-micron particles, maintain in black phases against water soaking, ultraviolet irradiation, and heating, exhibiting remarkable phase stability. A new phase-transition route, from γ via β to α phase without transferring into δ phase, has been discovered upon temperature increasing. The phase stability is ascribed to the high pressure exerted by the rigid SiO2 encapsulations, and its condensed amorphous structures that prevent the permeation of H2 O molecules. Nanoscale coating of Al2 O3 thin films, which are deposited on the surface of the CsPbI3 -SiO2 by ALD, enhances the protection against O2 infiltration, greatly elevating the high-temperature stability of CsPbI3 NCs sealed inside, as the samples remain bright after 1-h annealing in air at 400 °C. These fabrication and encapsulation techniques effectively prevent the formation of δ-CsPbI3 under harsh environment, bringing the high-pressure preservation of black-phase CsPbI3 from laboratory to industry toward potential applications in both photovoltaic and fluorescent areas.
Keywords: black phase CsPbI 3; pervoskite nanocrystal; phase stability.
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