Dielectric Engineering for Manipulating Exciton Transport in Semiconductor Monolayers

Nano Lett. 2021 Oct 13;21(19):8409-8417. doi: 10.1021/acs.nanolett.1c02990. Epub 2021 Sep 30.

Abstract

The dielectric screening from the disordered media surrounding atomically thin transition metal dichalcogenides (TMDs) monolayers modifies the effective defect energy levels and thereby the transport and energy dynamics of excitons. In this work, we study this effect in WSe2 monolayers for different combinations of surrounding dielectric media. Specifically, we study the source of the anomalous diffusion of excitons in the WSe2 monolayer and attribute the anomaly to the modification of the energy distribution of defect states in different disordered dielectric environments. We use this insight to manipulate exciton transport by engineering the dielectric environment using a graphene/hexagonal boron nitride (h-BN) moiré superlattice. Finally, we observe that the effect of dielectric disorder is even more significant at high excitation fluences, contributing to the nonequilibrium phonon drag effect. These results provide an important step toward achieving control over the exciton energy transport for next-generation opto-excitonic devices.

Keywords: dielectric environment; exciton transport; moiré superlattice; transition metal dichalcogenides.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Diffusion
  • Graphite*
  • Phonons
  • Semiconductors
  • Transition Elements*

Substances

  • Transition Elements
  • Graphite