Printed Electronic Devices with Inks of TiS3 Quasi-One-Dimensional van der Waals Material

Saba Baraghani; Jehad Abourahma; Zahra Barani; Amirmahdi Mohammadzadeh; Sriharsha Sudhindra; Alexey Lipatov; Alexander Sinitskii; Fariborz Kargar; Alexander A Balandin

doi:10.1021/acsami.1c12948

Printed Electronic Devices with Inks of TiS₃ Quasi-One-Dimensional van der Waals Material

ACS Appl Mater Interfaces. 2021 Oct 6;13(39):47033-47042. doi: 10.1021/acsami.1c12948. Epub 2021 Sep 23.

Authors

Saba Baraghani^{1

2}, Jehad Abourahma³, Zahra Barani¹, Amirmahdi Mohammadzadeh¹, Sriharsha Sudhindra¹, Alexey Lipatov³, Alexander Sinitskii^{3

4}, Fariborz Kargar^{1

2}, Alexander A Balandin^{1

2}

Affiliations

¹ Nano-Device Laboratory and Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States.
² Department of Chemical and Environmental Engineering, University of California, Riverside, California 92521, United States.
³ Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, United States.
⁴ Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, United States.

PMID: 34553916
DOI: 10.1021/acsami.1c12948

Abstract

We report on the fabrication and characterization of electronic devices printed with inks of quasi-one-dimensional (1D) van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allow for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS₃ into quasi-1D nanoribbons dispersed in a mixture of ethanol and ethylene glycol. The temperature-dependent electrical measurements indicate that the electron transport in the printed devices is dominated by the electron hopping mechanisms. The low-frequency electronic noise in the printed devices is of 1/f^γ-type with γ ∼ 1 near-room temperature (f is the frequency). The abrupt changes in the temperature dependence of the noise spectral density and γ parameter can be indicative of the phase transition in individual TiS₃ nanoribbons as well as modifications in the hopping transport regime. The obtained results attest to the potential of quasi-1D van der Waals materials for applications in printed electronics.

Keywords: TiS3; electron hopping conduction; low-frequency noise; printed electronics; quasi-1D materials.