Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

Wanqing Meng; Feifan Xu; Zhihao Yu; Tao Tao; Liangwei Shao; Lei Liu; Taotao Li; Kaichuan Wen; Jianpu Wang; Longbing He; Litao Sun; Weisheng Li; Hongkai Ning; Ningxuan Dai; Feng Qin; Xuecou Tu; Danfeng Pan; Shuzhuan He; Dabing Li; Youdou Zheng; Yanqing Lu; Bin Liu; Rong Zhang; Yi Shi; Xinran Wang

doi:10.1038/s41565-021-00966-5

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

Nat Nanotechnol. 2021 Nov;16(11):1231-1236. doi: 10.1038/s41565-021-00966-5. Epub 2021 Sep 9.

Authors

Wanqing Meng^#¹, Feifan Xu^#^{1

2}, Zhihao Yu^#^{1

3}, Tao Tao^#^{1

2}, Liangwei Shao¹, Lei Liu¹, Taotao Li^{1

4}, Kaichuan Wen⁵, Jianpu Wang⁵, Longbing He⁶, Litao Sun⁶, Weisheng Li¹, Hongkai Ning¹, Ningxuan Dai¹, Feng Qin^{1

7}, Xuecou Tu^{1

8}, Danfeng Pan^{1

8}, Shuzhuan He⁹, Dabing Li¹⁰, Youdou Zheng^{1

2}, Yanqing Lu⁴, Bin Liu^{11

12}, Rong Zhang^{13

14

15

16}, Yi Shi^{17

18}, Xinran Wang^{19

20}

Affiliations

¹ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
² Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing, China.
³ College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.
⁴ College of Engineering and Applied Sciences, Nanjing University, Nanjing, China.
⁵ Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
⁶ SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, Nanjing, China.
⁷ Tianma Microelectronics Co., Ltd, Shanghai, China.
⁸ Microfabrication and Integration Technology Center, Nanjing University, Nanjing, China.
⁹ Nanjing PureSemi Semiconductor Co., Ltd, Nanjing, China.
¹⁰ State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
¹¹ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. bliu@nju.edu.cn.
¹² Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing, China. bliu@nju.edu.cn.
¹³ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. rzhangxmu@xmu.edu.cn.
¹⁴ Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing, China. rzhangxmu@xmu.edu.cn.
¹⁵ Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, China. rzhangxmu@xmu.edu.cn.
¹⁶ Institute of Future Display Technology, Tan Kah Kee Innovation Laboratory, Xiamen, China. rzhangxmu@xmu.edu.cn.
¹⁷ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. yshi@nju.edu.cn.
¹⁸ Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing, China. yshi@nju.edu.cn.
¹⁹ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. xrwang@nju.edu.cn.
²⁰ Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing, China. xrwang@nju.edu.cn.

^# Contributed equally.

PMID: 34504324
DOI: 10.1038/s41565-021-00966-5

Abstract

Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. To adopt these emerging materials in computing and optoelectronic systems, back end of line (BEOL) integration with mainstream technologies is needed. Here, we show the integration of large-area MoS₂ thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays. The MoS₂ transistors exhibit median mobility of 54 cm² V^-1s ^-1, 210 μA μm^-1 drive current and excellent uniformity. The TFTs can drive micrometre-sized LEDs to 7.1 × 10⁷ cd m^-² luminance under low voltage. Comprehensive analysis on driving capability, response time, power consumption and modulation scheme indicates that MoS₂ TFTs are suitable for a range of display applications up to the high resolution and brightness limit. We further demonstrate prototypical 32 × 32 active-matrix displays at 1,270 pixels-per-inch resolution. Moreover, our process is fully monolithic, low-temperature, scalable and compatible with microelectronic processing.

Abstract

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