Integrated Terahertz Generator-Manipulators Using Epsilon-near-Zero-Hybrid Nonlinear Metasurfaces

Nano Lett. 2021 Sep 22;21(18):7699-7707. doi: 10.1021/acs.nanolett.1c02372. Epub 2021 Sep 9.

Abstract

In terahertz (THz) technologies, generation and manipulation of THz waves are two key processes usually implemented by different device modules. Integrating THz generation and manipulation into a single compact device will advance the applications of THz technologies in various fields. Here, we demonstrate a hybrid nonlinear plasmonic metasurface incorporating an epsilon-near-zero (ENZ) indium tin oxide (ITO) layer to seamlessly combine efficient generation and manipulation of THz waves across a wide frequency band. The coupling between the plasmonic resonance of the metasurface and the ENZ mode of the ITO thin film enhances the THz conversion efficiency by more than 4 orders of magnitude. Meanwhile, such a hybrid device is capable of shaping the polarization and wavefront of the emitted THz beam via the engineered nonlinear Pancharatnam-Berry (PB) phases of the plasmonic meta-atoms. The presented hybrid nonlinear metasurface opens a new avenue toward miniaturized integrated THz devices and systems with advanced functionalities.

Keywords: epsilon-near-zero; integrated generator-manipulator; metasurface; nonlinear Pancharatnam-Berry phase; terahertz.