Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Vladimir V Fedorov; Yury Berdnikov; Nickolay V Sibirev; Alexey D Bolshakov; Sergey V Fedina; Georgiy A Sapunov; Liliia N Dvoretckaia; George Cirlin; Demid A Kirilenko; Maria Tchernycheva; Ivan S Mukhin

doi:10.3390/nano11081949

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Nanomaterials (Basel). 2021 Jul 28;11(8):1949. doi: 10.3390/nano11081949.

Authors

Vladimir V Fedorov^{1

2}, Yury Berdnikov^{1

3}, Nickolay V Sibirev³, Alexey D Bolshakov^{1

4}, Sergey V Fedina¹, Georgiy A Sapunov¹, Liliia N Dvoretckaia¹, George Cirlin¹, Demid A Kirilenko⁵, Maria Tchernycheva⁶, Ivan S Mukhin^{1

3

7}

Affiliations

¹ Nanotechnology Research and Education Centre, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia.
² Institute of Physics, Nanotechnology and Telecommunications, Peter the Great Saint Petersburg Polytechnic University, Politekhnicheskaya 29, 195251 St. Petersburg, Russia.
³ Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia.
⁴ School of Physics, ITMO University, Kronverkskii, 49, 197101 St. Petersburg, Russia.
⁵ Ioffe Institute, Politekhnicheskaya 26, 194021 Saint Petersburg, Russia.
⁶ Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France.
⁷ Faculty of Chemistry, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia.

Abstract

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.

Keywords: GaP; molecular beam epitaxy; nanowires; two-stage growth.

Abstract

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