Uncovering the physics behind the electrical manipulation of low-dimensional magnetic materials remains a fundamental issue in practical application of nanoscale spintronics. Here, we propose a strategy to transform A-type antiferromagnetic (AFM) semiconductors into asymmetric AFM unipolar or bipolar magnetic semiconductors by applying perpendicular electric fields in van der Waals bilayer systems. Electric fields lifting energy levels of electrons within same spin channel from consistent layers in opposite direction enables unipolar magnetic semiconductor, whereas electrons within opposite spin channel enable bipolar magnetic semiconductor. A comprehensive study demonstrates this discrepancy originates from spatial distributions of spin density of valence band and conduction band edges in two layers of systems. The electric field induced unipolar or bipolar magnetic semiconducting behavior represents great potential of nanoscale AFM spintronics for information storage and processing.
Keywords: electric field; first-principles; two-dimensional material; unipolar and bipolar magnetic semiconductor.