Effect of In-Incorporation and Annealing on CuxSe Thin Films

Algimantas Ivanauskas; Remigijus Ivanauskas; Ingrida Ancutiene

doi:10.3390/ma14143810

Effect of In-Incorporation and Annealing on Cu_xSe Thin Films

Materials (Basel). 2021 Jul 8;14(14):3810. doi: 10.3390/ma14143810.

Authors

Algimantas Ivanauskas¹, Remigijus Ivanauskas¹, Ingrida Ancutiene¹

Affiliation

¹ Department of Physical and Inorganic Chemistry, Faculty of Chemical Technology, Kaunas University of Technology, 44249 Kaunas, Lithuania.

Abstract

A study of indium-incorporated copper selenide thin-film deposition on a glass substrate using the successive ionic adsorption and reaction method (SILAR) and the resulting properties is presented. The films were formed using these steps: selenization in the solution of diseleniumtetrathionate acid, treatment with copper(II/I) ions, incorporation of indium(III), and annealing in an inert nitrogen atmosphere. The elemental and phasal composition, as well as the morphological and optical properties of obtained films were determined. X-ray diffraction data showed a mixture of various compounds: Se, Cu_0.87Se, In₂Se₃, and CuInSe₂. The obtained films had a dendritic structure, agglomerated and not well-defined grains, and a film thickness of ~90 μm. The band gap values of copper selenide were 1.28-1.30 eV and increased after indium-incorporation and annealing. The optical properties of the formed films correspond to the optical properties of copper selenide and indium selenide semiconductors.

Keywords: SILAR; copper selenide; indium selenide; selenium.