We report the experimental observation of the UV-visible upconverted luminescence of bulk silicon under pulsed infrared excitation. We demonstrate that non-stationary distribution of excited carriers leads to the emission at spectral bands never to our knowledge observed before. We show that the doping type and concentration alter the shape of luminescence spectra. Silicon nanoparticles have a size between quantum-confined and Mie-type limits (10-100 nm) yet show increased luminescence intensity when placed atop a silicon wafer. The findings demonstrate that upconversion luminescence can become a powerful tool for nearest future silicon wafer inspection systems as a multimodal technique of measuring the several parameters of the wafer simultaneously.